to ? 92 1.collector 2. base 3. emitter to-92 plastic-encapsulate transistors BF370 transistor (npn) features z low saturation medium current application z high transition frequency maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 15 v emitter-base breakdown voltage v (br)ebo i e =100 a,i c =0 4.5 v collector cut-off current i cbo v cb =20v,i e =0 0.4 a emitter cut-off current i ebo v eb =2v,i c =0 0.1 a dc current gain h fe v ce =1v, i c =10ma 40 200 collector-emitter saturation voltage v ce(sat) i c =15ma,i b =1.5ma 0.2 v base-emitter saturation voltage v be(sat) i c =15ma,i b =1.5ma 1.2 v transition frequency f t v ce =10v,i c = 10ma,f=100 mhz 500 mhz symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 15 v v ebo emitter-base voltage 4.5 v i c collector current 0.1 a p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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